GS66508B-E01-MR
Manufacturer:
GaN Systems
Mfr.Part #:
GS66508B-E01-MR
Datasheet:
Description:
MOSFETs Die SMD/SMT N-Channel number of channels:1 650 V Continuous Drain Current (ID):30 A 6.1 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Number of Channels | 1 |
| Continuous Drain Current (ID) | 30 A |
| Gate Charge | 6.1 nC |
| Drain to Source Resistance | 63 mΩ |
| Gate to Source Voltage (Vgs) | -10 V, 7 V |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Gate to Source Threshold Voltage | 1.1 V |
| FET Type(Transistor Polarity) | N-Channel |
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